The effects of annealing encapsulant and ambient on the barrier height of WNx/GaAs contact and self-aligned gate field effect transistor fabrication
- 1 November 1988
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B
- Vol. 6 (6), 1779-1784
- https://doi.org/10.1116/1.584156