On-time determination of the composition of III-V ternary layers during VPE growth
- 1 May 1978
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 32 (9), 576-578
- https://doi.org/10.1063/1.90136
Abstract
A fast automatic ellipsometer has been used for determining the composition (and the rate of growth in favorable cases) of III‐V ternary compound semiconductor layers during their growth in a VPE reactor. The technique is demonstrated on Ga1−xAlxAs and GaAs1−xPx layers grown respectively in an organometallic and a chloride system. The elllipsometric angle ψ is shown to be directly related to the composition and the rate of growth of the layer. The ellipsometric angle Δ contains additional information on the growth mechanisms at the surface of the layer.Keywords
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