Difficulties of the microscopic theory of leakage current through ultra‐thin oxide barriers: point defects
- 25 August 2003
- journal article
- conference paper
- Published by Wiley in Physica Status Solidi (b)
- Vol. 239 (1), 48-58
- https://doi.org/10.1002/pssb.200303243
Abstract
No abstract availableKeywords
This publication has 26 references indexed in Scilit:
- The SIESTA method forab initioorder-Nmaterials simulationJournal of Physics: Condensed Matter, 2002
- Towards a first-principles simulation and current-voltage characteristic of atomistic metal-oxide–semiconductor structuresPhysical Review B, 2001
- Texture development in nanocrystalline hafnium dioxide thin films grown by atomic layer depositionJournal of Crystal Growth, 2000
- Band offsets of wide-band-gap oxides and implications for future electronic devicesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2000
- Density-functional theory calculations for poly-atomic systems: electronic structure, static and elastic properties and ab initio molecular dynamicsComputer Physics Communications, 1997
- Self-interaction correction to density-functional approximations for many-electron systemsPhysical Review B, 1981
- Ground State of the Electron Gas by a Stochastic MethodPhysical Review Letters, 1980
- Self-Consistent Equations Including Exchange and Correlation EffectsPhysical Review B, 1965
- Inhomogeneous Electron GasPhysical Review B, 1964
- Forces in MoleculesPhysical Review B, 1939