Low pressure deposition of polycrystalline silicon from silane
- 1 August 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 54 (2), 310-322
- https://doi.org/10.1016/0022-0248(81)90475-9
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
- The Nucleation of CVD Silicon on SiO[sub 2] and Si[sub 3]N[sub 4] SubstratesJournal of the Electrochemical Society, 1980
- Kinetics and mechanism of the silane decompositionInternational Journal of Chemical Kinetics, 1979
- Kinetics of decomposition of amorphous hydrogenated silicon filmsJournal of Applied Physics, 1979
- Polysilicon growth kinetics in a low pressure chemical vapour deposition reactorThin Solid Films, 1979
- Retention and endurance characteristics of HCl-annealed and unannealed MNOS capacitorsSolid-State Electronics, 1979
- Modeling of low-pressure deposition of SiO2by decomposition of TEOSIEEE Transactions on Electron Devices, 1979
- Structure and Stability of Low Pressure Chemically Vapor‐Deposited Silicon FilmsJournal of the Electrochemical Society, 1978
- Influence of crystal structure on the luminescence of ions with s2 configurationJournal of Solid State Chemistry, 1977
- Pyrolysis of monosilaneJournal of the American Chemical Society, 1970
- The 3P1 Mercury-Photosensitized Decomposition of MonosilaneThe Journal of Physical Chemistry, 1964