Intersubband transition in quantum wells and triple-barrier diode infrared detector concepts
- 31 December 1988
- journal article
- Published by Elsevier in Superlattices and Microstructures
- Vol. 4 (3), 343-349
- https://doi.org/10.1016/0749-6036(88)90180-2
Abstract
No abstract availableKeywords
This publication has 18 references indexed in Scilit:
- Multiple quantum well 10 μm GaAs/AlxGa1−xAs infrared detector with improved responsivityApplied Physics Letters, 1987
- New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlatticesApplied Physics Letters, 1987
- Observation of Stark shifts in quantum well intersubband transitionsApplied Physics Letters, 1987
- Periodic negative conductance by sequential resonant tunneling through an expanding high-field superlattice domainPhysical Review B, 1987
- Strong 8.2 μm infrared intersubband absorption in doped GaAs/AlAs quantum well waveguidesApplied Physics Letters, 1987
- Fast response quantum well photodetectorsJournal of Applied Physics, 1986
- Grating enhanced quantum well detectorApplied Physics Letters, 1985
- Narrow band infrared detection in multiquantum well structuresApplied Physics Letters, 1985
- First observation of an extremely large-dipole infrared transition within the conduction band of a GaAs quantum wellApplied Physics Letters, 1985
- New mode of IR detection using quantum wellsApplied Physics Letters, 1984