Reactive Ion Etching of PECVD n+ a‐Si:H: Plasma Damage to PECVD Silicon Nitride Film and Application to Thin Film Transistor Preparation
- 1 February 1992
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 139 (2), 548-552
- https://doi.org/10.1149/1.2069254