Abstract
An experimental arrangement is described for measuring in situ in a nearly continuous way the reflectance R and transmittance T near normal incidence, as well as the electrical DC resistance of thin films throughout their deposition and subsequent heat treatment. It is then possible to determine the effective complex dielectric constant epsilon and the electrical DC resistivity rho as functions of the mass thickness of the deposit and to follow their evolution during film growth. The possibilities of the method are demonstrated by an application to thin films of gold.