Many-body effects and the electron mobility in Si inversion layers at room temperature
- 31 August 1980
- journal article
- Published by Elsevier in Surface Science
- Vol. 98 (1-3), 202-209
- https://doi.org/10.1016/0039-6028(80)90495-1
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Many-body effects in the subband structure of Si-MOS inversion layerSurface Science, 1978
- Spectroscopy of surface space charge layersSurface Science, 1976
- Inversion layer mobility with intersubband scatteringSurface Science, 1976
- Surfons and the Electron Mobility in Silicon Inversion LayersJapanese Journal of Applied Physics, 1974
- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Transport, Collective Motion, and Brownian MotionProgress of Theoretical Physics, 1965