Growth of ZnSe films on GaAs 〈100〉 substrates by conventional and pulsed molecular beam epitaxy
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4), 522-524
- https://doi.org/10.1016/0022-0248(89)90457-0
Abstract
No abstract availableThis publication has 6 references indexed in Scilit:
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- RHEED Observation on (001)ZnSe Surface: MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se AdatomsJapanese Journal of Applied Physics, 1987
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- Atomic layer epitaxyJournal of Applied Physics, 1986
- Growth of High-Quality ZnSe Films by Low-Pressure Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1984