Holes at GaAs-As heterojunctions in magnetic fields
- 15 November 1985
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 32 (10), 6630-6633
- https://doi.org/10.1103/physrevb.32.6630
Abstract
The effects of anisotropy of the valence-band structure and of the mixing of the heavy and light holes on the Landau levels of the hole inversion layer in a normal magnetic field are studied. Some of the crossings of the Landau levels which occur when anisotropy is neglected are removed when it is included. While the measured multiple cyclotron-resonance frequencies are explained qualitatively by our calculation, there is quantitative disagreement.Keywords
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