Electroluminescence in reverse-biased ZnS:Mn Schottky diodes
- 1 November 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (9), 691-692
- https://doi.org/10.1063/1.91256
Abstract
Electroluminescence in reverse‐biased ZnS:Mn Schottky diodes is reported. The characteristics are similar to those ZnSe:Mn LEDS’s described previously. Light emission results from the impact excitation of manganese luminescent centres by hot electrons in the depletion region. The characteristic field for impact excitation is 8×105 V cm−1.Keywords
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