Monolayer heterointerfaces and thin layers (∼10 Å) in AlxGa1−xAs-GaAs superlattices grown by metalorganic chemical vapour deposition

Abstract

Transmission electron microscopy (TEM) and lattice fringe images are used to show that metalorganic chemical vapour deposition (MOCVD) is capable of growing highly uniform AlxGa1−xAs-GaAs quantum-well heterostructures (QWHs) and superlattices (SLs) with monolayer heterointerfaces and layers as thin as ∼10 Å.