Microwave characteristics of ion-implanted bipolar transistors
- 30 April 1973
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 16 (4), 441-451
- https://doi.org/10.1016/0038-1101(73)90181-0
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Ion-implanted bipolar transistor carrier concentration profilesSolid-State Electronics, 1973
- Characterization of microwave transistorsSolid-State Electronics, 1970
- Power Waves and the Scattering MatrixIEEE Transactions on Microwave Theory and Techniques, 1965
- The effects of distributed base potential on emitter-current injection density and effective base resistance for stripe transistor geometriesIEEE Transactions on Electron Devices, 1964
- Power Gain in Feedback AmplifierTransactions of the IRE Professional Group on Circuit Theory, 1954