High aspect ratio 0.1 μm tungsten gates for InGaAs/InAlAs heterojunction transistors

Publisher Website

1 November 1989

journal article
Published by American Vacuum Society in Journal of Vacuum Science & Technology B

Vol. 7 (6), 1836-1840
https://doi.org/10.1116/1.584676

Abstract

No abstract available

Keywords

HIGH ASPECT RATIO

Cited by 10 articles