Theoretical explanation of the absorptive optical bistability in semiconductors due to band-gap shrinkage
- 15 April 1984
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 44 (8), 787-789
- https://doi.org/10.1063/1.94886
Abstract
The creation of an electron-hole plasma in a semiconductor leads to a large band-gap shrinkage which can be used to obtain absorptive optical bistability caused by discontinuous jumps between states of weak band-tail absorption and states of strong band-edge absorption. These effects are described by rate equations for the photons and the free carriers. For CdS the calculated hysteresis phenomena are similar to the experimental results.Keywords
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