Interstitial Defects in p-Type Silicon
- 1 January 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 16 (6), 24-27
- https://doi.org/10.1109/tns.1969.4325500
Abstract
Two defects introduced in boron- and aluminum-doped silicon by 1.5-MeV electron irradiation have been studied by means of infrared photoconductivity. The defects have been identified as being dopant atoms in interstital positions. Stress-induced dichroism measurements have allowed the determination of the defects' symmetry which is C3v.Keywords
This publication has 4 references indexed in Scilit:
- Photoconductivity Studies of Defects in Silicon: Divacancy-Associated Energy LevelsPhysical Review B, 1968
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance and Electron-Nuclear Double Resonance of the Aluminum-Vacancy PairPhysical Review B, 1967
- Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the DivacancyPhysical Review B, 1965
- Stability of polyatomic molecules in degenerate electronic states - I—Orbital degeneracyProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1937