Real-time observations of vacancy diffusion on Si(001)-(2×1) by scanning tunneling microscopy
- 27 September 1993
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 71 (13), 2082-2085
- https://doi.org/10.1103/physrevlett.71.2082
Abstract
The motion of naturally occurring vacancies on Si(001)-(2×1) has been investigated in real time with scanning tunneling microscopy, using a novel method in which repeated line scans are displayed in the form of a time-versus-position pseudoimage. Individual jumps of the vacancies are resolved. Vacancy diffusion is one dimensional along the dimer row. An activation energy of 1.7±0.4 eV has been measured for the diffusion of the single dimer vacancy.Keywords
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