Improvement of intermodulation distortion in microwave m.e.s.f.e.t. amplifiers using gate-bias compensation

Abstract

A simple technique is described for improving the intermodulation distortion performance of microwave m.e.s.f.e.t. amplifiers. The technique utilises transistor gate-bias compensation controlled by the input signal level of the amplifier. For a constant output power of 0 dBm, an improvement in third-order intermodulation distortion product of up to 10 dB has been observed. The advantages and limitations of the technique are discussed.