The hall effect in HMTSeF-TCNQ
- 1 January 1976
- journal article
- Published by EDP Sciences in Journal de Physique Lettres
- Vol. 37 (12), 349-353
- https://doi.org/10.1051/jphyslet:019760037012034900
Abstract
The Hall effect in the organic charge transfer compound HMTSeF-TCNQ was measured as function of temperature and pressure. The Hall constant indicates metallic behaviour near ambient temperature, and semi-metallic behaviour at low temperatures, with approximately one carrier per 500-1000 formula units. The Hall constant changes sign around 32-36 K from hole-like at high temperatures to electron-like at low ones. The magnetoresistance was also measured as function of temperature and pressure, and found to be very large and anisotropic. The anisotropy in the resistivity was also measured as function of temperature and pressure, and the resistance in the crystalline direction of the Se—N bonds rises very rapidly below 20 K, much faster than the resistivity along the stacking axis. The carrier mobility under pressure at low temperature rises to approximately 4 x 104 cm2/Vs. Thus the semi-metallic nature of this material at low temperatures, under pressure, has been established and the Hall constant investigated for the first time in an organic metalKeywords
This publication has 5 references indexed in Scilit:
- A model for the electronic band structure of HMTSeF-TCNQSolid State Communications, 1976
- Semi-metallic behaviour of HMTSF-TCNQ at low temperatures under pressureSolid State Communications, 1976
- Magnetoresistance of TTF-TCNQCanadian Journal of Physics, 1975
- Low-Temperature Metallic Behavior and Resistance Minimum in a New Quasi One-Dimensional Organic ConductorPhysical Review Letters, 1975
- Electronic Properties of Tetracyanoquinodimethane (TCNQ) Salts: Hall Effect in Crystals of the Triethylammonium (TCNQ)2 ComplexPhysica Status Solidi (b), 1970