Reduction of threshold voltage in metal-induced-laterally-crystallized thin film transistors
- 20 January 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Effects of longitudinal grain boundaries on the performance of MILC-TFTsIEEE Electron Device Letters, 1999
- Nickel induced crystallization of amorphous silicon thin filmsJournal of Applied Physics, 1998
- Low temperature poly-Si thin-film transistor fabrication by metal-induced lateral crystallizationIEEE Electron Device Letters, 1996