Improved recovery of fast power diodes with self-adjusting p emitter efficiency
- 1 July 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (7), 322-324
- https://doi.org/10.1109/55.29666
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- High-speed low-loss p-n diode having a channel structureIEEE Transactions on Electron Devices, 1984
- A comparison of the performance of gold and platinum killed power diodesSolid-State Electronics, 1982
- Measurement and analysis of carrier distribution and lifetime in fast switching power rectifiersIEEE Transactions on Electron Devices, 1980
- Spatial composition and injection dependence of recombination in silicon power device structuresIEEE Transactions on Electron Devices, 1979