Epitaxial growth of p-type ZnMgSSe

Abstract

N‐doped p‐type ZnMgSSe was grown by molecular beam epitaxy. Nitrogen was induced by electron cyclotron resonance plasma. The maximum net acceptor concentration (N_A−N_D) and the activation energy of the nitrogen acceptor (E_N) depend on the band‐gap energy of ZnMgSSe. With increasing band‐gap energy, the maximum N_A‐N_D is decreased and E_N is increased. The maximum N_A‐N_D and the E_N of ZnMgSSe with a band‐gap energy of 3.05 eV at 77 K are 2.5×10¹⁶ cm⁻³ and 140 meV, respectively.