Oscillations in a SnO2-based gas sensing device exposed to H2 gas
- 1 January 1981
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 52 (1), 498-499
- https://doi.org/10.1063/1.328433
Abstract
An oscillation has been found in the resistivity of gas sensing devices of sintered SnO2 mixed with Pd, Rh, and MgO exposed to H2 gas in air. This phenomenon depends on the H2 gas concentration, the working device temperature, and the voltage applied to the device. Its waveforms consist of two structures and are conspicuously noticeable at 92 °C device temperature and 40 V voltage applied across the device.Keywords
This publication has 4 references indexed in Scilit:
- Oscillation phenomenon in thick-film CO sensorIEEE Transactions on Electron Devices, 1979
- Propane Gas Detector Using SnO2 Doped with Nb, V, Ti, or MoJournal of the Electrochemical Society, 1978
- Oscillation phenomenon in ThO2-doped SnO2 exposed to CO gasApplied Physics Letters, 1978
- Study on ZnO-Cr2O3 Catalyst. I Electrical Conductivity of Zinc Oxide in Oxygen and HydrogenBulletin of the Chemical Society of Japan, 1956