Switching behavior of epitaxial perovskite manganite thin films
- 6 September 1999
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 75 (10), 1473-1475
- https://doi.org/10.1063/1.124729
Abstract
We have observed electric-field-induced and photoinduced switching from insulating to conducting state in stressed epitaxial Sm0.5Sr0.5MnO3 thin films fabricated by pulsed-laser deposition. Previously known only in bulk crystals of perovskite manganese oxides, the switching behavior in thin film form is more significant for potential practical utility of the strongly correlated electron systems including optical devices.Keywords
This publication has 13 references indexed in Scilit:
- Electric-field-induced insulator–metal transitions in thin films of charge-ordered rare-earth manganatesApplied Physics Letters, 1999
- Atomically defined epitaxy and physical properties of strained La0.6Sr0.4MnO3 filmsApplied Physics Letters, 1998
- Current switching of resistive states in magnetoresistive manganitesNature, 1997
- Critical change of magnetoresistance with bandwidth and doping in perovskite manganitesApplied Physics Letters, 1997
- Photoinduced Insulator-to-Metal Transition in a Perovskite ManganitePhysical Review Letters, 1997
- An X-ray-induced insulator–metal transition in a magnetoresistive manganiteNature, 1997
- Pressure effects on charge-ordering transitions in Perovskite manganitesPhysical Review B, 1997
- Anomalous Magnetotransport Properties of Pr1-xCaxMnO3Journal of the Physics Society Japan, 1995
- Lattice Effects on the Magnetoresistance in Doped LaMnPhysical Review Letters, 1995
- Effects of Double Exchange in Magnetic CrystalsPhysical Review B, 1960