Fabrication and analysis of deep submicron strained-Si n-MOSFET's
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- 1 July 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 47 (7), 1406-1415
- https://doi.org/10.1109/16.848284
Abstract
No abstract availableKeywords
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