Electrical properties of n-type epitaxial indium phosphide films

Abstract

Electrical transport properties have been analyzed by Hall‐effect measurements for a series of epitaxial n‐type undoped InP films deposited on high‐resistivity GaAs : Cr or InP : Fe substrates by metalorganic chemical vapor deposition. For electron densities less than 10¹⁶ cm⁻³, films deposited on GaAs : Cr substrates show a general increase in electron mobility with increase in electron density as small structural potential barriers play a significant role in determining the mobility. All films deposited on InP : Fe substrates had an electron density greater than 10¹⁶ cm⁻³ and exhibited behavior virtually identical to that of bulk single crystals of InP. Electron mobilities at 77 °K as high as 10 500 cm²/V sec on GaAs : Cr substrates and 16 500 cm²/V sec on InP : Fe substrates have been measured.