X-Ray Diffraction Analyses and Etch Patterns of Faults in Epitaxial Silicon
- 1 October 1964
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 35 (10), 3061-3062
- https://doi.org/10.1063/1.1713173
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- ORIGIN OF STACKING FAULT IN EPITAXIALLY GROWN SILICONApplied Physics Letters, 1963
- X-Ray Analysis of Stacking Fault Structures in Epitaxially Grown SiliconJournal of Applied Physics, 1963
- Crystallographic Imperfections in Epitaxially Grown SiliconJournal of Applied Physics, 1962
- Effect of Thermal History on the Dislocation Substructure near the Surfaces of a Lithium Fluoride CrystalJournal of Applied Physics, 1960
- Method for the Detection of Dislocations in Silicon by X-Ray Extinction ContrastPhysical Review B, 1958