Observation of the nanoscale epitaxial growth of diamond on Si (100) surface
- 1 February 1996
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 79 (3), 1813-1815
- https://doi.org/10.1063/1.360975
Abstract
Epitaxial growth of noncrystalline diamond thin film on Si(001) surface has been observed using high-resolution transmission electron microscopy. The epitaxial lattice relationship at diamond/Si interface has been described based on a cube-cube orientation with a≊7° tilt plus a rotation of the diamond lattice from the substrate lattice. The observed epitaxial behavior can be explained by the 3:2 lattice coincidence and the introduction of interfacial misfit dislocations.Keywords
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