Parallel silicide contacts

Abstract

Parallel silicide contacts consisting of PtSi and NiSi with fixed ratios of contact areas were prepared for current‐voltage and capacitance‐voltage measurements of Schottky barrier height. These measurements were analyzed with models assuming a linear combination of thermionic emission currents or junction capacitances. The measured and the computed values of barrier height have been found to agree very well. A systematic diagnosis of parallel contacts under a variety of conditions is presented in the Appendix.