A flow channel reactor for GaAs vapor phase epitaxy
- 2 January 1982
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 56 (2), 324-331
- https://doi.org/10.1016/0022-0248(82)90450-x
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
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- A comparative thermodynamic analysis of InP and GaAs depositionJournal of Physics and Chemistry of Solids, 1975
- Kinetics of transport and epitaxial growth of GaAs with a Ga-AsCl3 systemJournal of Crystal Growth, 1971
- Epitaxial Growth of Doped and Pure GaAs in an Open Flow SystemJournal of the Electrochemical Society, 1965
- Preparation of GaAs[sub x]P[sub 1−x] by Vapor Phase ReactionJournal of the Electrochemical Society, 1964