The 1.3–1.6 nm nitrided oxide prepared by NH3 nitridation and rapid thermal annealing for 0.1 μm and beyond CMOS technology application
- 30 April 2002
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 46 (4), 539-544
- https://doi.org/10.1016/s0038-1101(01)00274-x
Abstract
No abstract availableKeywords
This publication has 15 references indexed in Scilit:
- High-quality ultrathin (1.6 nm) nitride/oxide stack gate dielectrics prepared by combining remote plasma nitridation and LPCVD technologiesIEEE Electron Device Letters, 2001
- Characterization of ultrathin oxynitride (18-21 A) gate dielectrics by NH/sub 3/ nitridation and N/sub 2/O RTA treatmentIEEE Transactions on Electron Devices, 2001
- Direct tunneling gate leakage current in transistors with ultrathin silicon nitride gate dielectricIEEE Electron Device Letters, 2000
- The performance and reliability of PMOSFET's with ultrathin silicon nitride/oxide stacked gate dielectrics with nitrided Si-SiO/sub 2/ interfaces prepared by remote plasma enhanced CVD and post-deposition rapid thermal annealingIEEE Transactions on Electron Devices, 2000
- Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacksIEEE Electron Device Letters, 2000
- Scaling the gate dielectric: Materials, integration, and reliabilityIBM Journal of Research and Development, 1999
- Modeling and characterization of quantization, polysilicon depletion, and direct tunneling effects in MOSFETs with ultrathin oxidesIBM Journal of Research and Development, 1999
- Growth and characterization of ultrathin nitrided silicon oxide filmsIBM Journal of Research and Development, 1999
- Remote plasma nitrided oxides for ultrathin gate dielectric applicationsPublished by SPIE-Intl Soc Optical Eng ,1998
- Electrical properties and reliability of MOSFET's with rapid thermal NO-nitrided SiO/sub 2/ gate dielectricsIEEE Transactions on Electron Devices, 1995