High-output power InGaAsP (λ=1.3 μm) strip-buried heterostructure lasers
- 1 March 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 36 (5), 358-360
- https://doi.org/10.1063/1.91503
Abstract
An InGaAsP (λ=1.3 μm) strip‐buried heterostructure laser with active layer strip widths of 5 μm is described. These devices show stable fundamental‐transverse‐mode operation with linear light‐current characteristics to pulsed output powers over 100 mW. Output powers as high as 500 mW are observed without catastrophic damage, which corresponds to twice the power output at which catastrophic mirror damage occurs for similar GaAlAs SBH lasers. Far‐field beam divergence is approximately 10° and 30° in the directions parallel and perpendicular to the junction, respectively. cw operation with a threshold current of 170 mA has been achieved at room temperature.Keywords
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