A high speed optoelectronic matrix switch using heterojunction switching photodiodes
- 1 August 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (8), 1539-1546
- https://doi.org/10.1109/JQE.1981.1071301
Abstract
Heterojunction switching photodiodes (InGaAs/InP) were used to construct a 3 × 3 optoelectronic matrix switch. Biconical taper type optical power splitters were used to distribute the signals to the matrix switch crosspoints. Isolation and crosstalk losses were better than 63 dB over a frequency range of 10 Hz-400 MHz and 400 Mbit/s NRZ digital signals were switched with switching times shorter than 30 ns.Keywords
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