Cyclotron resonance linewidth in selectively doped GaAs-AlxGa1−xAs heterojunctions
- 15 December 1981
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 39 (12), 982-984
- https://doi.org/10.1063/1.92634
Abstract
Far‐infrared cyclotron resonance (CR) experiments in a selectively doped AlxGa1−xAs ‐GaAs heterojunction are presented. Quantum oscillations appear in the CR line amplitude as theoretically predicted for a two‐dimensional electron gas. The CR linewidth is found to depend on the infrared photon energy, and its correlation with the static mobility is interpreted in the framework of the Ando and Uemura’s model for a two‐dimensional electron gas in a high magnetic field.Keywords
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