The Diffusion and Solubility of Phosphorus in CdTe and CdSe

Abstract

Measurements of the solubility and diffusion of P in CdSe from 800°–1000°C and in CdTe at 900° and 950°C as a function of cadmium partial pressure were made using radiotracer techniques. In addition, electrical measurements were made on some P‐doped samples of both systems. The phosphorus solubility is highest at a given temperature under maximum cadmium pressure. It is suggested that under these conditions the phosphorus is a substitutional acceptor atom on a chalcogen site that is highly compensated by a donor defect with interstitial Cd donors a likely possibility. The diffusion results are similar to that observed for the chalcogen self‐diffusion and are not inconsistent with an interstitial mechanism.