Charge Multiplication in GaP p-n Junctions
- 1 December 1965
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 36 (12), 3945-3946
- https://doi.org/10.1063/1.1713978
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
- RADIATIVE RECOMBINATION IN GaP p-n AND TUNNEL JUNCTIONSApplied Physics Letters, 1965
- Ionization Rates of Holes and Electrons in SiliconPhysical Review B, 1964
- Avalanche Breakdown in Gallium ArsenideJunctionsPhysical Review B, 1962
- Distribution Functions and Ionization Rates for Hot Electrons in SemiconductorsPhysical Review B, 1962
- Charge Multiplication in GaP p-n JunctionsJournal of Applied Physics, 1962
- Infrared Lattice Absorption of GaPPhysical Review B, 1960
- Threshold Energy for Electron-Hole Pair-Production by Electrons in SiliconPhysical Review B, 1957
- Avalanche Breakdown in GermaniumPhysical Review B, 1955
- Avalanche Breakdown in SiliconPhysical Review B, 1954