Conduction and Valence Band Edges of Porous Silicon Determined by Electron Transfer
- 1 January 1996
- journal article
- research article
- Published by American Chemical Society (ACS) in Journal of the American Chemical Society
- Vol. 118 (18), 4490-4491
- https://doi.org/10.1021/ja9538795
Abstract
No abstract availableThis publication has 12 references indexed in Scilit:
- Size Dependence of Excitons in Silicon NanocrystalsPhysical Review Letters, 1995
- Energy Transfer Quenching of Porous Si Photoluminescence by Aromatic MoleculesJournal of the American Chemical Society, 1995
- Identifying and quantifying point defects in semiconductors using x-ray-absorption spectroscopy: Si-doped GaAsPhysical Review B, 1995
- Electronic Structure Pseudopotential Calculations of Large (.apprx.1000 Atoms) Si Quantum DotsThe Journal of Physical Chemistry, 1994
- Theoretical aspects of the luminescence of porous siliconPhysical Review B, 1993
- A luminescent silicon nanocrystal colloid via a high-temperature aerosol reactionThe Journal of Physical Chemistry, 1993
- Theory of the quantum confinement effect on excitons in quantum dots of indirect-gap materialsPhysical Review B, 1992
- Electronic structure and optical properties of silicon crystallites: Application to porous siliconApplied Physics Letters, 1992
- Hydrogenated Si clusters: Band formation with increasing sizePhysical Review B, 1992
- Visible light emission due to quantum size effects in highly porous crystalline siliconNature, 1991