The influence of the lattice misfit on the growth of CuGaSe2 Epitaxial Films on {100}-oriented GaAs and GaP Substrates
- 1 January 1983
- journal article
- research article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (1), 71-75
- https://doi.org/10.1002/crat.2170180112
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Structural investigations of CuInSe2 epitaxial layers on {110}- and {100}-oriented GaAs SubstratesJournal of Crystal Growth, 1981
- Adamantine ternary epitaxial layersProgress in Crystal Growth and Characterization, 1980
- Crystal data for AgGaxIn1−xSe2and CuGaxIn1−xSe2Journal of Applied Crystallography, 1980