High-performance thin-film transistors from optimized polycrystalline silicon films
- 29 June 1987
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 50 (26), 1894-1896
- https://doi.org/10.1063/1.97678
Abstract
The performance of thin-film transistors fabricated in unrecrystallized (small-grain) polcrystalline silicon is shown to be greatly improved by depositing the films at much lower pressures than normally used in the low-pressure chemical vapor deposition process. Electronic measurements on completed devices are presented and related to the film structure by transmission electron microscopy examination.Keywords
This publication has 5 references indexed in Scilit:
- Determination of gap state density in polycrystalline silicon by field-effect conductanceApplied Physics Letters, 1986
- Subthreshold behavior of thin-film LPCVD PolySilicon MOSFET'sIEEE Transactions on Electron Devices, 1986
- Completely integrated contact-type linear image sensorIEEE Transactions on Electron Devices, 1985
- Schottky Contact Fabrication for GaAs MESFET'sJournal of the Electrochemical Society, 1982
- The Nucleation of CVD Silicon on SiO[sub 2] and Si[sub 3]N[sub 4] SubstratesJournal of the Electrochemical Society, 1980