Compressively strained multiple quantum well InAsSb lasers emitting at 3.6 μm grown by metal-organic chemical vapor deposition
- 27 January 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 70 (4), 443-445
- https://doi.org/10.1063/1.118176
Abstract
A compressively strained InAsSb/InAs multiple quantum-well (MQW) structure was grown by low-pressure metal-organic chemical vapor deposition. Maximum output power (from two facets) up to 1 W with differential efficiency about 70% was obtained from a MQW laser with stripe width of 100 μm and cavity length of 700 μm for emitting wavelength of 3.65 μm at 90 K in pulse mode operation. About 2 times lower threshold current density was obtained from the MQW lasers for a temperature range of 90 to 140 K compared to the double heterostructure lasers grown on the same growth conditions.Keywords
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