Enhancement of Ferroelectricity in Strained BaTiO 3 Thin Films
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- 5 November 2004
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 306 (5698), 1005-1009
- https://doi.org/10.1126/science.1103218
Abstract
Biaxial compressive strain has been used to markedly enhance the ferroelectric properties of BaTiO 3 thin films. This strain, imposed by coherent epitaxy, can result in a ferroelectric transition temperature nearly 500°C higher and a remanent polarization at least 250% higher than bulk BaTiO 3 single crystals. This work demonstrates a route to a lead-free ferroelectric for nonvolatile memories and electro-optic devices.Keywords
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