Use of Fermi statistics in two-dimensional numerical simulation of heterojunction devices
- 1 May 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (5), 408-413
- https://doi.org/10.1088/0268-1242/5/5/006
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Computer simulations of Schottky contacts with a non-constant recombination velocitySolid-State Electronics, 1989
- Numerical simulation of an AlGaAs/GaAs bipolar inversion channel field effect transistorSolid-State Electronics, 1988
- MONTE: A Program to Simulate the Heterojunction Devices in Two DimensionsIEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems, 1986
- Classical versus quantum mechanical calculation of the electron distribution at the n-AlGaAs/GaAs heterointerfaceIEEE Transactions on Electron Devices, 1986
- Thermionic emission-diffusion theory of isotype heterojunctionsSolid-State Electronics, 1984
- Approximations for Fermi-Dirac integrals, especially the function F12(η) used to describe electron density in a semiconductorSolid-State Electronics, 1982
- The approximation of the Fermi-Dirac integral
F 1 2 (η)Physics Letters A, 1978 - Large-signal analysis of a silicon Read diode oscillatorIEEE Transactions on Electron Devices, 1969
- p-n heterojunctionsSolid-State Electronics, 1964
- The Theory of Rectification and Injection at a Metal-Semiconductor ContactProceedings of the Physical Society. Section B, 1954