In-situ monitoring of chemical reactions in MOCVD growth of ZnSe
- 1 December 1986
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 79 (1-3), 363-370
- https://doi.org/10.1016/0022-0248(86)90462-8
Abstract
No abstract availableThis publication has 26 references indexed in Scilit:
- The mechanism of the growth of InP by MOCVD: A flow-tube investigation of the pyrolysis of the indium precursorJournal of Crystal Growth, 1984
- The mechanism of the growth of InP by MOCVD: An investigation of the pyrolyses of some group III metal-organicsJournal of Crystal Growth, 1984
- Electrical and Photo-luminescence Properties of ZnSe Thin Films Grown by Molecular Beam Epitaxy: Substrate Temperature EffectJapanese Journal of Applied Physics, 1983
- Metalorganic Chemical Vapor DepositionAnnual Review of Materials Science, 1982
- Studies of the pyrolysis of diethylzinc by the toluene carrier method and of the reaction of ethyl radicals with tolueneCanadian Journal of Chemistry, 1976
- Pyrolysis of dimethylzinc and dimethylzinc-d6 by the toluene carrier methodCanadian Journal of Chemistry, 1970
- The Use of Metal-Organics in the Preparation of Semiconductor MaterialsJournal of the Electrochemical Society, 1969
- THIN SILICONE MEMBRANES‐THEIR PERMEATION PROPERTIES AND SOME APPLICATIONSAnnals of the New York Academy of Sciences, 1968
- Metal-carbon bonds. Part 2.—The pyrolysis of dimethyl zincTransactions of the Faraday Society, 1957
- Active methyl radicals in the photolysis of dimethyl mercuryTransactions of the Faraday Society, 1949