Vapour-grown 1.3 μm InGaAsP/InP avalanche photodiodes

1 January 1979

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 15 (5), 141-142
https://doi.org/10.1049/el:19790100

Abstract

A novel planar InGaAsP/InP avalanche photodiode structure prepared by vapour-phase epitaxy is described. Avalanche gain up to 20 at 1.3 μm and at reverse breakdown of 65 V has been measured.

Keywords

65 V REVERSE BREAKDOWN
VPE
PLANAR STRUCTURE
INGAASP/INP AVALANCHE PHOTODIODES
20 AVALANCHE GAIN
1.3 MICRON ILLUMINATION

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