Monolithic InP HEMT V-band low-noise amplifier
- 1 June 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Microwave and Guided Wave Letters
- Vol. 2 (6), 236-238
- https://doi.org/10.1109/75.136517
Abstract
A fully monolithic indium phosphide high electron mobility transistor (InP HEMT) two-stage low-noise amplifier has achieved a noise figure, of 4.2 dB with an associated gain of 15.25 dB over the band from 56 to 60 GHz. Noise matching and bias decoupling are accomplished on-chip. The successful performance of the amplifier is credited to accurate characterization of the active and passive devices that make up the circuit.Keywords
This publication has 5 references indexed in Scilit:
- AlInAs/GaInAs on InP HEMT low noise MMIC amplifiersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Ultra low noise high gain W-band InP-based HEMT downconverterPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A super low-noise 0.1 mu m T-gate InAlAs-InGaAs-InP HEMTIEEE Microwave and Guided Wave Letters, 1991
- Microwave InAlAs/InGaAs/InP HEMTs: status and applicationsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1990
- AlInAs-GaInAs HEMT for microwave and millimeter-wave applicationsIEEE Transactions on Microwave Theory and Techniques, 1989