Flash X-ray irradiation of P-N junctions: A method to measure minority carrier lifetimes, diffusion constants and generation constants
- 30 September 1971
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 14 (9), 827-833
- https://doi.org/10.1016/s0038-1101(71)80008-4
Abstract
No abstract availableKeywords
This publication has 1 reference indexed in Scilit:
- The Use of Bulk Semiconductor Material for Absorbed-Dose MeasurementsIEEE Transactions on Nuclear Science, 1965