Donor spectroscopy in GaAs
- 16 December 1968
- journal article
- Published by Elsevier in Physics Letters A
- Vol. 28 (5), 320-321
- https://doi.org/10.1016/0375-9601(68)90309-5
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Impact ionization breakdown of n-type epitaxial GaAs at liquid helium temperaturesSolid-State Electronics, 1968
- Far-Infrared Optical Properties of Ca, Sr, Ba, and CdPhysical Review B, 1967
- IONIZATION ENERGY AND IMPURITY BAND CONDUCTION OF SHALLOW DONORS IN n-GALLIUM ARSENIDECanadian Journal of Physics, 1967
- The Preparation and Properties of Vapor-Deposited Epitaxial GaAs[sub 1−x]P[sub x] Using Arsine and PhosphineJournal of the Electrochemical Society, 1966
- Far Infra‐Red PhotoconductivityPhysica Status Solidi (b), 1964
- Electrical Properties of-Type Gallium ArsenidePhysical Review B, 1962
- On the Preparation of High Purity Gallium ArsenideJournal of Applied Physics, 1962