Forming process in evaporated SiO thin films
- 1 November 1967
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine
- Vol. 16 (143), 1049-1061
- https://doi.org/10.1080/14786436708229693
Abstract
A forming process is examined that is found to occur in evaporated SiO thin films. The manner in which the forming process is influenced by temperature, SiO thickness, gaseous atomosphere, electrode material and applied voltage is described. A model of the forming process is presented, assuming the process is the injection of ions into the SiO network.Keywords
This publication has 9 references indexed in Scilit:
- Poole-Frenkel Effect and Schottky Effect in Metal-Insulator-Metal SystemsPhysical Review B, 1967
- A hot electron, cold cathode, emitterRadio and Electronic Engineer, 1967
- Electrical Conduction through SiO FilmsJournal of Applied Physics, 1966
- Electrical Conductivity in Evaporated Silicon Oxide FilmsJournal of Applied Physics, 1966
- Non-Ohmic Conduction in Vacuum-Deposited SiO FilmsJapanese Journal of Applied Physics, 1965
- Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al–Al2O3–Au DiodesJournal of Applied Physics, 1965
- Ag Ion Migration in α QuartzJournal of Applied Physics, 1964
- Impurity Conduction and Negative Resistance in Thin Oxide FilmsJournal of Applied Physics, 1964
- Low-Frequency Negative Resistance in Thin Anodic Oxide FilmsJournal of Applied Physics, 1962