An above-IC RF-MEMS switch
- 22 December 2003
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
A MEMS switch is driven by a 0.25/spl mu/m BiCMOS IC and achieves 0.4dB insertion loss and 54dB isolation at 2GHz. The 400/spl mu/m/spl times/50/spl mu/m MEMS device is built together on top of the wafers enabling a system-on-chip design.Keywords
This publication has 3 references indexed in Scilit:
- RF MEMS switches and switch circuitsIEEE Microwave Magazine, 2001
- RF MEMS from a device perspectiveJournal of Micromechanics and Microengineering, 2000
- Micromachined low-loss microwave switchesJournal of Microelectromechanical Systems, 1999