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THEORETICAL STUDY OF 100 GHz GaAs TRANSFERRED-ELECTRON DEVICES
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THEORETICAL STUDY OF 100 GHz GaAs TRANSFERRED-ELECTRON DEVICES
THEORETICAL STUDY OF 100 GHz GaAs TRANSFERRED-ELECTRON DEVICES
PR
P. A. Rolland
P. A. Rolland
MF
M. R. Friscourt
M. R. Friscourt
GS
G. Salmer
G. Salmer
EC
E. Constant
E. Constant
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1 October 1981
journal article
Published by
EDP Sciences
in
Le Journal de Physique Colloques
Vol. 42
(C7)
,
C7-171
https://doi.org/10.1051/jphyscol:1981719
Abstract
Computer simulations of GaAs Transferred Electron Devices have been performed using a model which includes relaxation effects as well as spatial dependence. Some results are presented and discussed for 100 GHz GaAs short Gunn diodes
Keywords
THEORETICAL STUDY
ELECTRON DEVICES
GAAS TRANSFERRED ELECTRON
GHZ GAAS TRANSFERRED
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Cited by 2 articles